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以 In/InP(110)及 P/InP(110)表面模拟富 In及富P的InP表面,采用半经验的紧束缚方法计算了 In/InP(110)及 P/InP(110)表面的电子能态.并与实验结果相比较,讨论了InP(110)表面化学成分偏析对费米能级钉扎的影响.
The surface of In / InP (110) and P / InP (110) surfaces were modeled with In and P-rich InP surfaces, and the semiempirical tight-binding method was used to calculate the surface charges of In / InP Compared with the experimental results, the effect of chemical segregation of InP (110) surface on Fermi level pinning is discussed.