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采用全耗尽CMOS／SIMOX工艺成功地研制出了沟道长度为0．5μm的可在1．5V和3．0V电源电压下工作的SOI器件和环形振荡器电路．在1．5V和3．0V电源电压时环振的单级门延迟时间分别为840ps和390ps．与体硅器件相比，全耗尽CMOS／SIMOX电路在低压时的速度明显高于体硅器件，亚微米全耗尽CMOS／SOI技术是低压低功耗和超高速集成电路的理想选择．
The fully depleted CMOS / SIMOX process successfully developed a channel length of 0.5μm at 1.5V and 3.0V supply voltage work SOI devices and ring oscillator circuit. Ring-locked single stage gate delays of 840ps and 390ps at 1.5V and 3.0V supply, respectively. Fully depleted CMOS / SIMOX circuits are significantly faster at low voltages than bulk silicon devices, and submicron fully depleted CMOS / SOI technology is ideal for low-voltage, low-power and very high speed ICs compared to bulk silicon devices.