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阻变存储器(RRAM)是下一代最有潜力的非易失性存储器。利用磁控溅射、电子束蒸发和离子束溅射方法制备了一种Ag/VO_x/Al结构的RRAM。使用半导体参数分析仪(Agilent B1500A)测试了器件的电学特性,器件具有双极阻变特性。器件的高阻态的传输机制为空间电荷限制电流(SCLC)机制,低阻态的传输机制为欧姆机制,器件的阻变机制为金属导电细丝机制。研究了不同退火温度(150~300℃)对Ag/VO_x/Al器件阻变性能的影响。研究表明,不同退火温度不仅会影响VO_x薄膜的表面形貌与晶面组成,而且会影响器件的电学性能,在退火温度为200℃时器件的阻变窗口最大,而在300℃时器件的耐久性最优秀。适当的退火温度有益于改善器件的阻变性能。
Resistive memory (RRAM) is the next generation of the most promising non-volatile memory. A kind of Ag / VO_x / Al RRAM was prepared by magnetron sputtering, electron beam evaporation and ion beam sputtering. The device’s electrical characteristics were tested using a semiconductor parametric analyzer (Agilent B1500A) with bipolar resistance change characteristics. The transmission mechanism of the device’s high-impedance state is the space charge-limited current (SCLC) mechanism. The transmission mechanism of the low-resistance state is the ohmic mechanism, and the resistive-switching mechanism of the device is the metal conductive filament mechanism. The effect of different annealing temperature (150 ~ 300 ℃) on the resistance change property of Ag / VO_x / Al devices was studied. The results show that different annealing temperatures not only affect the surface morphology and crystal plane of the VO_x thin films, but also affect the electrical properties of the device. The maximum resistance change window of the device is observed at 200 ℃, while the device is durable at 300 ℃ Sex is the best Appropriate annealing temperature is conducive to improving the resistivity of device.