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采用磁控溅射法,在玻璃基底上一步沉积In_2S_3薄膜。研究了溅射功率对In_2S_3薄膜的成分、结构、表面形貌和光电性能的影响。结果表明:所制备的所有薄膜均为β-In_2S_3,无杂相存在,且具有(222)面择优生长特性。溅射功率对薄膜的成分、厚度和结晶度具有明显的影响,并因此影响薄膜的光学和电学性能。薄膜在100W沉积时最接近化学计量比,薄膜的透过率随着溅射功率增大在500nm波段附近显著提高,禁带宽度达到2.45eV,同时电流密度增大两个数量级。
Magnetron sputtering method was used to deposit In_2S_3 thin film on glass substrate in one step. The influence of sputtering power on the composition, structure, surface morphology and photoelectric properties of In_2S_3 thin films was investigated. The results show that all the prepared films are β-In_2S_3, which have no heterogeneous phase and have the (222) surface preferred growth characteristics. The sputtering power has a significant effect on the composition, thickness and crystallinity of the film and therefore affects the optical and electrical properties of the film. The film deposited at 100W is the closest to the stoichiometric ratio, the transmittance of the film increases sharply with the increase of sputtering power in the 500nm band, the bandgap reaches 2.45eV, and the current density increases by two orders of magnitude.