Improvement on Frequency Performance of SOI SiGe HBT

• 出 处: Semiconductor Photonics and Technology
• 发表日期: 2006年03期
• 关键词: SiGe crosstalk capacitance collection buried Electron emitter collector doping a

Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. Compared with bulk SiGe HBT, the results show that the buried oxide layer(BOX) can reduce collector-base capacitance C_ CB with the maximum value 89.3%, substrate-base capacitance C_ SB with 94.6%, and the maximum oscillation frequency is improved by 2.7. The SOI structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.

Compared with bulk SiGe HBT, the results show that the buried oxide layer (BOX) can reduce collector-base capacitance C_Cb with the maximum value 89.3%, and the maximum oscillation frequency is improved by 2.7. The SOI structure improves the frequency performance of SiGe HBT, which is adaptable to high-speed and high power applications.