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实验研究了两种由ICP刻蚀不同结构的n型GaN材料与金属接触形成的肖特基二极管的I-V特性,分析计算了GaN基肖特基二极管的势垒高度和理想因子。研究发现n型GaN半导体材料表面费米能级钉扎,且费米能级的钉扎对n型GaN材料表面的金半接触所形成的肖特基势垒高度起决定性作用;结果表明表面经过ICP刻蚀后,n型GaN表面的氧化层消除,价带中态密度增多,有利于载流子的遂道效应与金属较易形成欧姆接触。
I-V characteristics of two schottky diodes formed by contact between n-type GaN material with different structures and metal by ICP etching were experimentally studied, and the barrier height and ideal factor of GaN-based Schottky diodes were analyzed and calculated. It has been found that the Fermi level pinning on the surface of n-type GaN semiconductor material and pinning of Fermi level plays a decisive role in the Schottky barrier height formed by the gold semi-contact on the surface of n-type GaN material. After ICP etching, the oxide layer on the n-type GaN surface is eliminated, and the density of states in the valence band is increased, which is in favor of the tunneling effect of carriers and the formation of ohmic contact with the metal.