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Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H2 gas mixture. The effects of growth temperature from 150 to 450 ℃ on properties of deposited Si films were investigated at two different hydrogen diluted gases with [H2]/([Ar]+[H2]) of 10％and 50％at 3 Pa. The crystallinity of Si films examined by Raman scattering exhibited higher degradation by lowering growth temperature from 250 to 150 ℃ in low hydrogen diluted gas of 10％ than that in high hydrogen diluted gas of 50％. The IR absorption band around 845 and 890 cm-1 as well as calculated concentration of bonded hydrogen showed more obvious decrease of samples deposited in low hydrogen diluted gas of 10％ than that in high hydrogen diluted gas of 50％. The optical band gasps of both groups of samples measured by ultraviolet-visible optical absorption were decreased with increasing temperature in both gas conditions.