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应用射频磁控共溅射方法在石英玻璃和抛光硅片上制备了InP SiO2 复合薄膜 ,并在几种条件下对这些薄膜进行退火 .X射线光电子能谱和卢瑟福背散射实验结果表明 ,复合薄膜中InP和SiO2 的化学组分都大体上符合化学计量配比 .X射线衍射和激光喇曼谱实验结果都证实了复合薄膜中形成了InP纳米晶粒 .磷气氛保护下的高温(5 2 0℃ )退火可以消除复合薄膜中残存的In和In2 O3 并得到了纯InP SiO2 纳米复合薄膜 .实验观察到了室温下纳米复合薄膜的明显的光学吸收边蓝移现象和光学非线性的极大增强
InP SiO2 composite films were prepared on quartz glass and polished silicon wafers by RF magnetron co-sputtering method and the films were annealed under several conditions.The results of X-ray photoelectron spectroscopy and Rutherford backscattering experiments show that, The chemical composition of InP and SiO2 in the composite films are in line with the stoichiometry in general.X-ray diffraction and laser Raman spectroscopy results confirm the formation of InP nanocrystals in the composite thin film.The high temperature 2 0 ℃) annealing can eliminate the remaining In and In2 O3 in the composite film and get a pure InP SiO2 nanocomposite film.The obvious optical absorption edge blue shift and large optical nonlinearity of the nanocomposite film were observed at room temperature Enhanced