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题 目工 作 报 告期 页射频功率晶体管可靠性设计研究…………………………………………………一(双外延材料选取实验一400兆50瓦硅大功率音外延材料探讨………………一(氮化硼片源扩散工艺的选择………………………………………………………一(半自动单探针扩展电阻法测量电阻
Title Work Report Period RF Power Transistor Reliability Design ................................................................................................................................................................................................................................................................................. .................. A (boron nitride chip source diffusion process selection ............................................... a (semi-automatic single-probe expansion resistance measurement of resistance