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硅衬底是很有应用前景的表面。这是因为硅衬底在机械上和化学上的适应性能够抵御水环境和有机环境带来的影响。除此之外,优良的电学性质也是它们成为具有应用前景的表面的原因。目前有许多方法来进行硅表面的巯基化,很多情况下是将具有―SH末端的分子接枝到硅衬底上。但这些方法存在反应时间长的问题。在这篇报导中,我们发展了一种新的硅表面巯基化方法。这种方法可以实现将巯基直接接枝到硅片表面。新方法需要对硅衬底进行氯化和巯基化反应,所需的反应时间缩短。X射线光电子能谱(XPS)和接触角测量被用于研究反应中每个步骤的表面表征。
Silicon substrate is a very promising surface. This is because the silicon substrate is mechanically and chemically adapted to withstand the effects of the water environment and the organic environment. In addition, the excellent electrical properties make them the reason why they are promising surfaces. Currently there are many ways to carry out thiolation of the silicon surface, in many cases grafting -SH-terminated molecules onto silicon substrates. However, these methods have the problem of long reaction time. In this article, we have developed a new method of thiolation of silicon surfaces. This method can be achieved directly to the mercapto-grafted to the silicon surface. The new method requires chlorination and thiolation of the silicon substrate and the required reaction time is shortened. X-ray photoelectron spectroscopy (XPS) and contact angle measurements were used to investigate the surface characterization of each step in the reaction.