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溅射离子镀膜是一种高度牢固性离子镀膜的新方法。它特别适用于高熔点金属合金和混合物的沉积，而且同样适用于更有用的低熔点材料。目前研制的这种方法，来用简单的氩中直流辉光放电，通过离子轰击（溅射）作用，由相应的阴极（靶子），把材料输送到适当地装在低真空室内部的基板上。成功与否取决于室的正确设计和在约１０－４巴压力下纯净气体的连续流量。室本身或内部衬套的布置，适于在 ２００℃以上的高温下工作，泵的连接，能防止污染气体和蒸汽的返扩散。因此，即使维持过程要求的低真空，只需要简单的机械泵，但是在镀膜区也能容易地得到纯洁的气体条件。可以把阴极配成薄板形或其他要求的几何形状，以便获得高的发射能力和高度的镀膜均匀性，一般不要求基板的旋转或运动。除混合物阴极（或具有两个以上的元件的阴极）的直接溅射外，可以放进化学活性气体并控制其浓度，以便通过反应性溅射来沉积混合物。目前镀膜速率为０．５──５微米／小时。对基板加负偏压，以进行离子清洗，同时在沉积过程中控制镀膜结构。如果实现了适当的寓子清洗，涂层对基板的粘着力总是很高的。
Sputtering ion plating is a new method of highly robust ion plating. It is particularly suitable for the deposition of high-melting-point metal alloys and mixtures, but also for more useful low-melting materials. The method currently developed is to deliver the material from a corresponding cathode (target) by ion bombardment (sputtering) using a simple argon dc glow discharge to a substrate suitably placed inside the lower vacuum chamber . Success depends on the correct design of the chamber and the continuous flow of pure gas at a pressure of about 10-4 bar. The arrangement of the chamber itself or the inner bushing is suitable for operation above 200 ° C and the connection of the pump prevents back diffusion of contaminated gases and vapors. Therefore, even a simple mechanical pump is required even for the low vacuum required to maintain the process, pure gas conditions are readily available in the coated area. The cathode can be shaped into sheet shapes or other required geometries in order to achieve high emission capabilities and high film uniformity without the need for substrate rotation or movement. In addition to direct sputtering of the mixture cathode (or cathode with more than two elements), a chemically active gas can be placed and its concentration controlled to deposit the mixture by reactive sputtering. The current coating rate of 0.5 ─ ─ 5 microns / hour. The substrate is biased negatively to perform ion cleaning while controlling the coating structure during deposition. The coating’s adhesion to the substrate is always high if proper cleaning of the doffs is achieved.