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The current-voltage (I- V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100-300 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal-semiconductor interface. The evaluation of the experimental I-V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630 e V and standard deviation of 0.083 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71 A K-2 cm-2, respectively, by means of the modified Richardson plot, ln( I0/T2) - (q2σs20/2k2T2) versus 1000/T.