Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared

• 作 者: 赵江 赵修建
• 机 构: Key Laboratory of Silicate Materials Science and Engineering,Wuhan University of Technology,Ministry
• 出 处: Journal of Wuhan University of Technology(Materials Science
• 发表日期: 2011年03期
• 关键词: transmittance sputtering magnetron tetragonal rutile resistivity preferred rough

High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio-frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structure with the preferred orientation of (101).The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM).The electrical characteristic (including carrier concentration,Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2(V ·sec)-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

High transparent and conductive thin films of zinc doped tin oxide (ZTO) were deposited on quartz substrates by the radio frequency (RF) magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target. The effect of substrate temperature on the structural, electrical and optical performances of ZTO films have been studied. X-ray diffraction (XRD) results show that ZTO films possess tetragonal rutile structures with the preferred orientation of (101). The surface morphology and roughness of the films was investigated by the atomic force microscope (AFM). The electrical characteristic (including carrier concentration, Hall mobility and resistivity) and optical transmittance were studied by the Hall tester and UV-VIS, respectively.The highest carrier concentration of -1.144 × 1020 cm-3 and the Hall mobility of 7.018 cm2 (V · sec) -1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116 × 10 -2 Ω · cm were obtained when the ZTO films deposited at 250 oC.