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本文详细介绍了电沉积制备Cu(In,Ga)Se2(CIGS)薄膜的原理。电解液由CuCl2,InCl3,GaCl3和柠檬酸钠溶液组成。溶流组成通过改变柠檬酸钠的浓度,铟和镓的沉积电位接近或等于铜和硒的沉积电位。Cu(In,Ga)Se2薄膜的性能研究分别采用扫描电镜自带能谱仪(EDS)、X射线衍射(XRD)和扫描电镜分析Cu(In,Ga)Se2薄膜的化学组成、晶体结构和表面形貌。结果表明当柠檬酸钠浓度为1.0M时,所制备的Cu(In,Ga)Se2薄膜为单一的黄铜矿结构,晶粒大小均匀。
In this paper, the principle of electrodepositing Cu (In, Ga) Se2 (CIGS) films is described in detail. The electrolyte consists of CuCl2, InCl3, GaCl3 and sodium citrate solution. Dissolution Composition By varying the concentration of sodium citrate, the deposition potentials of indium and gallium are close to or equal to the deposition potentials of copper and selenium. The properties of Cu (In, Ga) Se2 thin films were investigated by scanning electron microscopy (EDS), X-ray diffraction (XRD) and scanning electron microscopy (SEM). The chemical composition, crystal structure and surface Topography The results show that when the concentration of sodium citrate is 1.0M, the prepared Cu (In, Ga) Se2 film has a single chalcopyrite structure with uniform grain size.