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一、引言 近年来,国内外研究者对无位错Si单晶中的微观缺陷,都十分重视,已发表了比较系统的研究报告。应当说,无位错晶体的制备成功,这标志着科学研究工作向完整的理想的晶体已经跨进了一大步了。相对于有线缺陷的有位错晶体来说,无位错晶体的结构已比较完整了,但是,它的晶格还不是完整无缺的。到目前为止,人们借助于腐蚀法,X光貌相术,透射电子显微镜等手段,发现无位错Si单晶中还存在有结构缺陷,如位错环、生长条纹、杂质团、空位团以及不希望的杂质O,C,N等。上述这些发现,给科技工作者又提出了新的任务,要继续向完美晶体结构进军。国内在这方面的工作已有进展,都观察到了Si晶体中有严重的微观缺陷,并积极进行探讨。从目前来看,国际上在研究工作中所借助的手段有:(1)腐蚀法,(2)红外显微镜(IRM)配以缀蚀工艺,
I. INTRODUCTION In recent years, researchers at home and abroad have attached great importance to the microscopic defects in dislocated Si single crystals and have published comparatively systematic research reports. It should be said that the preparation of dislocation-free crystals is a sign that the scientific research work has taken a giant step toward a complete and ideal crystal. The structure of dislocation-free crystals is more complete than dislocations with wired defects, but its lattice is not yet intact. So far, people have found that there are also structural defects such as dislocation loops, growth stripes, impurity clusters, vacancy clusters, and the like in dislocation-free Si single crystals by means of etching, X-ray topography and transmission electron microscopy The desired impurities O, C, N and so on. These findings have given science and technology workers a new task of continuing to march toward the perfect crystal structure. Domestic work in this area has been progress, have observed the Si crystal serious micro-defects, and actively explore. From the current point of view, the international community in the research work by means of: (1) corrosion method, (2) infrared microscopy (IRM) accompanied by embossing process,