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用正丁胺作碳源,采用射频辉光等离子系统制备类金刚石碳膜(DLC),沉积在聚合物发光器件中的发光层(MEH-PPV)和铝(Al)阴极间作电子注入层.制备了结构为ITO/MEH-PPV/DLC/Al的不同DLC厚度的器件,测量了器件的I-V特性、亮度及效率,研究了DLC层对器件电子注入性能影响的机制.结果表明当DLC厚度小于1·0nm时,其器件有较ITO/MEH-PPV/Al高的启动电压和低的发光效率;当DLC厚度在1·0~5·0nm之间时,器件的性能随着DLC厚度增加而变好;当DLC厚度为5·0nm时,器件具有最低的启动电压与最高的发光效率;当DLC厚度继续增加时,器件的性能随着DLC厚度增加而变差.并对ITO/MEH-PPV/DLC/Al和ITO/MEH-PPV/LiF/Al的器件性能进行了比较研究.
Using n-butylamine as a carbon source, a diamond-like carbon film (DLC) was prepared by radio frequency glow plasma system, and the electron injection layer was deposited between the MEH-PPV and aluminum cathode in the polymer light emitting device. The device IV characteristics, brightness and efficiency were measured and the mechanism of DLC layer on the electron injection performance was investigated.The results show that when the DLC thickness is less than 1 The device has a higher starting voltage and lower luminous efficiency than ITO / MEH-PPV / Al at 0 nm. When the DLC thickness is between 1.0 and 5.0 nm, the performance of the device changes with the increase of the DLC thickness The device has the lowest startup voltage and the highest luminous efficiency when the thickness of DLC is 5.0 nm.When the DLC thickness continues to increase, the performance of the device decreases with the increase of the DLC thickness.And the performance of ITO / MEH-PPV / DLC / Al and ITO / MEH-PPV / LiF / Al device performance were compared.