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在InP(0 0 1)衬底上使用分子束外延技术自组织生长了多周期InAs/InAlGaAs量子点阵列结构 .根据对透射电镜和光致发光谱结果的分析 ,认为引入与InP衬底晶格匹配的InAlGaAs缓冲层可以获得较大的InAs量子点结构 ,而InAlGaAs层的表面特性对InAs量子点的结构及光学性质有很大影响 .对InP基InAlGaAs缓冲层上自组织量子点的形核和演化机制进行了探讨 ,提出量子点的演化过程表现为量子点的合并长大并伴随着自身的徙动 ,以获得能量最优的分布状态 .
Multi-periodic InAs / InAlGaAs quantum dot array structures were grown on InP (001) substrates by using molecular beam epitaxy technique.Based on the results of TEM and PLS analysis, it was considered that lattice-matched InAlGaAs buffer layer can obtain a larger InAs quantum dot structure, and the InAlGaAs layer surface properties of InAs quantum dots structure and optical properties have a great impact on InP-based InAlGaAs buffer layer self-organized quantum dots nucleation and evolution Mechanism is discussed, and the evolution of QDs is presented as the mergence and growth of QDs with its own migration to obtain the optimal energy distribution.