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应变补偿量子阱结构因带宽大、增益高和波长漂移速度低等特点而成为近年来研究的热点。首次介绍了国内980nm高功率InGaAs/GaAsP应变补偿量子阱结构的垂直腔面发射激光器(VCSEL)的变温实验,测得脉冲条件下600μm直径的器件在10～100℃温度范围内发射波长漂移速度为0.05nm/K,阈值电流随温度变化呈现先缓慢下降后迅速上升的特性。结合VCSEL反射谱、PL谱和增益峰值波长漂移速度,对器件阈值电流特性进行了合理的分析和解释。连续工作状态下,测试得到器件峰值功率为1W,根据波长与耗散功率的实验曲线及热阻计算公式,可估算出垂直腔面发射激光器热阻值为10K/W。
Strain compensation quantum well structure due to the large bandwidth, high gain and low wavelength drift characteristics of the research has become a hot spot in recent years. The vertical temperature experiment of vertical cavity surface emitting laser (VCSEL) with 980nm high power InGaAs / GaAsP strain compensated quantum well structure is introduced for the first time. The wavelength drift of the 600μm diameter device under the condition of 10 ~ 100 ℃ is 0.05nm / K, the threshold current with the temperature showed a slow decline after the rapid rise of the characteristics. With the VCSEL reflection spectrum, PL spectrum and gain peak wavelength drift velocity, the device threshold current characteristics are analyzed and explained reasonably. Under continuous working condition, the peak power of the device is 1W. According to the experimental curves of wavelength and power dissipation and the calculation formula of thermal resistance, the thermal resistance of vertical cavity surface emitting laser can be estimated to be 10K / W.