High responsivity 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors

• 出 处: Science in China(Series G:Physics,Mechanics & Astronomy)
• 发表日期: 2008年11期
• 关键词: ultraviolet spacing Schottky contacts diverse visible annealing nickel Electron

4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm-spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A/W at 20 V, and a peak re-sponse wavelength at 290 nm. The fabricated devices held a high DUV to visible re-jection ratio of >103.

4H-SiC based metal-semiconductor-metal (MSM) photodetectors with diverse spacing were designed, fabricated, and characterized, in which nickel Schottky contacts were needed. Current-voltage and spectral responsivity measurements were carried out at room temperature. The fabricated 4 μm -spacing device showed a very low dark current (0.25 pA at 5 V bias voltage), a typical responsivity of 0.103 A / W at 20 V, and a peak re-sponse wavelength at 290 nm. The fabricated devices held a high DUV to visible re-jection ratio of> 103.