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通过在调制掺杂Al0 2 2 Ga0 78N/GaN异质结构上淀积Pb(Zr0 53 Ti0 4 7)O3 (PZT)铁电薄膜 ,我们发展了一种基于AlxGa1-xN/GaN异质结构的金属 铁电 半导体 (MFS)结构。在高频电容 电压 (C V)特性测量中 ,发现Al0 2 2 Ga0 78N/GaN异质界面二维电子气 ( 2DEG)的浓度在 -1 0V偏压下从 1 5 6× 1 0 13 cm-2 下降为 5 6× 1 0 12 cm-2 。由于PZT薄膜的铁电极化 ,在 -1 0V偏压下可以观察到宽度为 0 2V的铁电C V窗口 ,表明在没有铁电极化方向反转的条件下 ,PZT/AlxGa1-xN/GaNMFS结构也能出现存储特性。因为 2DEG带来的各种优点 ,可以认为AlxGa1-xN/GaN异质结构在以存储器为目标的MFS场效应晶体管中有重要应用。
By depositing a Pb (Zr0 53 Ti0 4 7) O3 (PZT) ferroelectric thin film on a modulated doped Al0 2 2 Ga0 78N / GaN heterostructure, we developed a metal based on an AlxGa1-xN / GaN heterostructure Ferroelectric semiconductor (MFS) structure. In the measurement of high frequency capacitor voltage (CV) characteristics, it was found that the concentration of two dimensional electron gas (2DEG) at Al0 2 2 Ga0 78N / GaN heterostructures was increased from 156 × 1013 cm-2 at -1 0 V bias Down to 5 6 × 10-12 cm-2. Due to the ferroelectric polarization of the PZT thin film, a ferroelectric CV window with a width of 0.2V can be observed at -100V bias indicating that the PZT / AlxGa1-xN / GaNMFS structure Can appear storage characteristics. Because of the various advantages of 2DEG, it is believed that AlxGa1-xN / GaN heterostructures have important applications in memory-targeted MFS field-effect transistors.