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采用一步水热法结合低温煅烧制备了BiVO4和Y-BiVO4半导体光催化材料,并通过XRD、SEM、FT-IR、UVVis DSR和PL进行结构分析与性能表征.测试结果表明,在掺杂Y3+后,BiVO4的晶型由四方相向单斜相转变,且出现十面体晶粒.光催化活性测试结果表明,通过Y3+掺杂和低温煅烧均可提升BiVO4对RhB的降解率;煅烧后所得Y-BiVO4显现出较高的光催化活性,是未煅烧BiVO4降解率的2倍,在120min内对RhB的降解率可达86.6％.“,”BiVO4 and Y-BiVO4 semiconductor photocatalytic materials were prepared by one-step hydrothermal method and low temperature calcination, and the structure and properties were characterized and analyzed by XRD, SEM, FT-IR, UV-Vis DSR and PL.The test results show that the crystal form of Y3+-doped BiVO4 is transformed from tetragonal phase to monoclinic phase with decahedral grains.Photocatalytic activity test results show that both Y3+doping and low temperature calcination could enhance the degradation rate of BiVO4 to RhB.The calcined Y-BiVO4 exhibits higher photocatalytic activity, which is 2 times the degradation rate of uncalcined BiVO4, and the degradation rate of RhB is 86.6％ within 120 min.