【摘 要】
：
对一种结构新颖的锗硅NPN HBT器件的特性进行了研究。通过分析器件发射极窗口宽度W和长度L对器件直流和交流特性的影响,对器件在结构上和制作工艺上进行了优化,得到性能与业
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对一种结构新颖的锗硅NPN HBT器件的特性进行了研究。通过分析器件发射极窗口宽度W和长度L对器件直流和交流特性的影响,对器件在结构上和制作工艺上进行了优化,得到性能与业界可比的三种不同耐压水平的器件(高速器件、标准器件和高压器件),并且成功地被应用于光通讯和射频功放等商业产品中。
A novel structure of silicon germanium NPN HBT device properties were studied. By analyzing the influence of emitter window width W and length L on the DC and AC characteristics of the device, the structure and fabrication process of the device are optimized to obtain three different devices with high breakdown voltage (high-speed device , Standard devices and high-voltage devices) and has been successfully used in commercial products such as optical communications and RF power amplifiers.
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