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采用反应磁控溅射并在氧氛围下进行后退火处理的方式,制备了氧化钒薄膜。尝试了在氧化钒上以不同衬底温度和溅射功率等工艺条件溅射金属薄膜电极。通过对氧化钒-金属接触的电流-电压(I-V)测试的数据进行分析拟合,研究了氧化钒薄膜表面性质和测试偏压的变化对I-V特性曲线欧姆系数的影响。结果表明在化学计量比约为VO2.15的非晶氧化钒薄膜上,溅射的金属电极随着溅射功率和测试偏压的提高,I-V特性曲线的线性度得到了逐步的改善。通过比较Ni/Cr,Ti及Al不同金属电极的接触性能,提出了合理的欧姆接触工艺条件以及电极工作电压范围。
A vanadium oxide film was prepared by reactive magnetron sputtering and post-annealing in an oxygen atmosphere. Attempts were made to sputter the metal thin film electrodes on vanadium oxide with different substrate temperatures and sputtering powers. The influence of the change of the surface properties and the bias voltage of the vanadium oxide film on the ohmic coefficient of the I-V characteristic curve was investigated by fitting and analyzing the data of the current-voltage (V-V) test of vanadium oxide-metal contact. The results show that the linearity of the I-V characteristic curve is gradually improved with the increase of sputtering power and the test bias voltage on the amorphous vanadium oxide film with a stoichiometric ratio of about VO2.15. By comparing the contact performance of different metal electrodes of Ni / Cr, Ti and Al, a reasonable ohmic contact process conditions and the working voltage range of the electrodes are proposed.