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研究了硅光电二极管经快中子（注入剂量为1011cm2、能量2．45MeV）和O+++（注入剂量为1010cm－2、能量12MeV）辐照后光电参数的变化规律，并通过光谱光电流的变化，对辐照损伤的空间分布进行了分析。结果表明：两种辐照均引起器件的光电流下降、暗电流增加。在本实验条件下，快中子造成的损伤轻微且均匀地分布在整个器件体内，而O+++辐照损伤区集中在器件表面附近，其损伤较快中子的严重。
The change rule of the photoelectric parameters of the silicon photodiode after the fast neutron (1011cm2 implantation, 2.45MeV energy) and O +++ (1010cm-2 implantation, 12MeV energy) was studied. By the change of the photocurrent, The spatial distribution of radiation damage was analyzed. The results show that both irradiation cause the photocurrent of the device to decrease and the dark current increase. Under the experimental conditions, the damage caused by the fast neutrons is slightly and evenly distributed throughout the device body, while the damage zone of O +++ radiation is concentrated near the surface of the device, resulting in serious damage of neutrons.