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This paper reports a new material, indium-doped ZnS (ZnS:In) film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS:In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation.The AFM results imply that largesized particles are compactly dispersed in the ZnS:In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10~(-2) cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.
By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS: In film XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that largesized particles are compactly dispersed in the ZnS: In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46 × 10 -2 cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical / optical performance has been made in this paper.