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This paper investigates the capacitance-voltage(C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure.The F doping SiCOH films are deposited by decamethylcyclopentasiloxane(DMCPS) and trifluromethane(CHF3) electron cyclotron resonance plasmas.With the CHF3/DMCPS flow rate ratio from 0 to 0.52,the positive excursion of C-V curves and the increase of flat-band voltage VFB from 6.1 V to 32.2 V are obtained.The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations,and the increase of F concentration.At the CHF3/DMCPS flow rate ratio is 0.12,the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.
This paper investigates the capacitance-voltage (CV) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure. The F doping SiCOH films are deposited by decamethylcyclopentasiloxane (DMCPS) and trifluromethane (CHF3) electron cyclotron resonance plasmas. CHF3 / DMCPS flow rate ratio from 0 to 0.52, the positive excursion of CV curves and the increase of flat-band voltage VFB from 6.1 V to 32.2 V are the. The excursion of CV curves and the shift of VFB are related to the change of defects density and type at the Si / SiCOH interface due to the decrease of Si and O concentrations, and the increase of F concentration. At the CHF3 / DMCPS flow rate ratio is 0.12, the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.