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铝膜(或其它金属薄膜)通常是在真空条件下,加热蒸发铝材料并淀积到基片(硅片)表面形成的。传统的蒸发技术都是采用钨丝作为加热体,使铝熔化产生蒸汽蒸发,由于钨原料和钨丝的碱法生产使钨丝中不可避免地带进了大量的对半导体器件极为有害的钠离子,用钨丝加热蒸发时一起进入铝膜,在以后的合金化(?)热处理过程中又进入二氧化硅层和硅表面层。
Aluminum (or other metal films) are typically formed by heating evaporated aluminum material and depositing it on the surface of a substrate (wafer) under vacuum. The traditional evaporation technology uses tungsten wire as a heating body to melt the aluminum to generate steam to evaporate. Due to the alkali production of the tungsten raw material and the tungsten wire, the tungsten wire is inevitably brought into a large amount of sodium ions which are extremely harmful to the semiconductor devices, The tungsten film is heated and evaporated into the aluminum film together, and then into the silicon dioxide layer and the silicon surface layer during the subsequent alloying (?) Heat treatment.