论文部分内容阅读
采用溶胶-凝胶法在LaNiO3/Si衬底上制备Er3+掺杂BaTiO3薄膜。通过XRD、AFM和PL图谱分别研究薄膜的晶体结构、形貌以及上转换发光性能。结果表明,薄膜的微观结构和发光性能与Er3+掺杂晶格的位置有关。A位掺杂薄膜较B位掺杂薄膜具有较小的晶格常数和较好的结晶。PL光谱表明:A位掺杂的薄膜和B位掺杂的薄膜都于528nm和548nm处获得较强的绿色上转换发光以及在673nm处获得较弱的红光,分别对应Er3+离子的2H11/2→4I15/2,4S3/2→4I15/2和4F9/2→4I15/2能级跃迁。相对于B位掺杂的薄膜,A位掺杂样品有较强的绿光发射积分强度以及较弱的红光发射相对强度。这种差异可以通过薄膜的结晶状况和交叉弛豫机制来进行解释。
Preparation of Er3 + Doped BaTiO3 Films on LaNiO3 / Si Substrates by Sol - Gel Method. The crystal structure, morphology and upconversion luminescence properties of the films were investigated by XRD, AFM and PL spectra respectively. The results show that the microstructure and luminescent properties of the films are related to the positions of the Er3 + doped lattices. The A-doped films have smaller lattice constants and better crystallites than the B-doped films. PL spectra show that both the A-doped and B-doped films have stronger green upconversion luminescence at 528nm and 548nm and weaker red at 673nm, corresponding to 2H11 / 2 of Er3 + ions → 4I15 / 2, 4S3 / 2 → 4I15 / 2 and 4F9 / 2 → 4I15 / 2 energy level transitions. Compared with the B-doped films, the A-doped samples have stronger green emission integral intensity and weaker red emission relative intensity. This difference can be explained by the crystalline state of the film and the cross relaxation mechanism.