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本文叙述了梁式引线结构的双极微波低噪声晶体管的设计和制造工艺。我们介绍的方法具有如下优点:简单、有良好的器件可靠性(金属化为钛-铂-金,并用氮化硅作最终钝化),而且能够用于现时的精细几何结构。把梁式引线结构晶体管和封装的晶体管所获得的结果进行比较,清楚地表明,微波晶体管能够采用梁式引线制作,而不使高频性能退化。对于具有4个条宽为1.5微米发射极的梁式引线梳状结构来说,它在2千兆赫下的性能典型值为 G_(Pmax)=11.2分贝,NF_(min)=3.30分贝,G_p(NF_(min))=9.2分贝。
This article describes the design and manufacturing process of a bipolar microwave low noise transistor with a beam lead structure. The method we describe has the following advantages: simplicity, good device reliability (metallization to titanium-platinum-gold and final passivation with silicon nitride), and to the current fine geometry. Comparing the results obtained with the beam-lead transistor and the packaged transistor clearly shows that the microwave transistor can be fabricated with a beam lead without degrading the high-frequency performance. For beamline comb structures with four emitters of 1.5 micron stripe width, the typical performance at 2 GHz is G Pmax = 11.2 dB, NF min = 3.30 dB, G_p NF_ (min)) = 9.2 dB.