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采用射频等离子体化学气相沉积技术合成氮化碳薄膜，测量其Ｘ射线光电子能谱（ＸＰＳ），获得两组Ｃ（１ｓ）电子和Ｎ（１ｓ）电子结合能，它们是Ｅ（Ｃ１）＝３９８．０～３９８．７ｅＶ，Ｅ（Ｃ２）＝２８４．６～２８４．８ｅＶ；Ｅ（Ｎ１）＝３９８．０～３９８．７ｅＶ，Ｅ（Ｎ２）＝４００．０～４００．９ｅＶ。证实了薄膜中碳原子存在ｓｐ３杂化轨道成键和ｓｐ２杂化轨道成键两种键合形式。该方法合成的氮化碳薄膜含氮量在１２．０～５３．７％，含氮量随沉积时氮气流量的增大而增大。
The carbon nitride films were synthesized by radio frequency plasma chemical vapor deposition and their X-ray photoelectron spectra (XPS) were measured to obtain two sets of C (1s) and N (1s) electron binding energies, which were E . E (C2) = 284.6-2884.8 eV; E (N1) = 398.0-398.7 eV, E (N2) = 400.0-400.9 eV. It is confirmed that there are two kinds of bonding forms of sp3 hybrid orbital and sp2 hybrid orbital bonding in carbon atoms in the film. The carbon nitride thin film synthesized by the method has a nitrogen content of 12.0-53.7%, and the nitrogen content increases as the nitrogen flow rate increases during the deposition.