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利用磁过滤真空阴极电弧技术制备了sp~3键含量不小于80%的四面体非晶碳薄膜(ta-C),然后通过氮离子束改性技术制备了氮掺杂的四面体非晶碳(ta-C:N)薄膜.利用Raman光谱和X射线光电子能谱对薄膜结构的分析,研究了氮离子轰击能量对ta-C:N薄膜结构的影响.氮离子对ta-C薄膜的轰击,形成了氮掺杂的ta-C:N薄膜.氮离子轰击诱导了薄膜中sp~3键向sp~2键转化,以及CN键的形成.在ta-C:N薄膜中,氮掺杂的深度和浓度随着氮离子能量的增大而增大.ta-C:N薄膜中sp~2键的含量和sp~2键团簇的尺寸随着氮离子轰击能量的增大而增加;在ta-C:N薄膜中,CN键主要由C—N键和C=N键构成,C—N键的含量随着氮离子轰击能量的增大而减小,但是C=N键含量随着氮离子轰击能量的增大而增大.在ta-C:N薄膜中不含有C≡N键结构.
A tetrahedral amorphous carbon film (ta-C) with sp ~ 3 bond content of not less than 80% was prepared by vacuum filtration cathodic arc technique. Nitrogen-doped tetrahedral amorphous carbon (ta-C: N) thin films.The influence of nitrogen ion bombardment energy on the structure of ta-C: N thin films was investigated by Raman spectroscopy and X-ray photoelectron spectroscopy.The bombardment of ta-C thin films by nitrogen ions , A nitrogen-doped ta-C: N thin film was formed. Nitrogen ion bombardment induced the sp ~ 3 bond to sp ~ 2 bond formation and CN bond formation in the film. In ta-C: N thin films, Depth and concentration increase with the increase of nitrogen ion energy.The content of sp ~ 2 bond and the size of sp ~ 2 bond inta-C: N film increase with the increase of nitrogen ion bombardment energy; In the ta-C: N thin film, the CN bond is mainly composed of C-N bond and C = N bond, the content of C-N bond decreases with the increase of nitrogen ion bombardment energy, but the content of C = N bond Increasing with the increase of nitrogen ion bombardment energy.The ta-C: N film does not contain C≡N bond structure.