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采用气相生长法研制金刚石薄膜正以惊人的速度转向实用化。然而,还存在不少不解之谜。等离子CVD法中这些需要解决的问题大致可归纳如下:(1)等离子中碎片及其作用;(2)基板上的成核机理;(3)超临界核的结晶生长及均一膜化;(4)增加对索缺陷、杂质的控制等。
The development of diamond thin films by vapor growth is turning to practical use at an astonishing rate. However, there are still many mysteries. The problems to be solved in the plasma CVD method can be summarized as follows: (1) the fragments in the plasma and their effects; (2) the nucleation mechanism on the substrate; (3) the crystal growth and the uniform filming of the supercritical nucleus; (4 Increase the defect on the cable, impurity control.