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在纯氮气体起辉放电产生的紫外光的激励下，到达ＧａＡｓ表面的Ｎ２会离解并和Ｇａ、Ａｓ原子成键，Ｘ射线光电子能谱测量结果证实了这一设想．
Excited by the ultraviolet light generated by the pure discharge of pure nitrogen gas, the N2 reaching the surface of GaAs dissociates and bonds with Ga and As atoms. The X-ray photoelectron spectroscopy measurement confirms this assumption.