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采用脉冲激光沉积方法在p-Si(100)衬底上生长ZnO薄膜,分别在500℃、600℃和700℃下真空退火,采用X射线衍射仪研究了退火对ZnO薄膜晶体结构的影响,并测量了ZnO的面电阻和ZnO/p-Si异质结的I-V特性曲线。研究表明,随着退火温度的升高,ZnO的(002)衍射峰强度逐渐增大,半峰全宽不断减小,同时薄膜内应力减小,ZnO晶粒尺寸变大。表明高温退火有助于ZnO薄膜结晶质量的提高。在没有光照的条件下,异质结的漏电流随退火温度的增加而增大;用650 nm光照射样品时,600℃退火的样品表现出最明显的光电效应,而过高的退火温度会破坏ZnO/p-Si异质结的界面结构,使其光电流变小。所以,要得到性能良好的光电器件,应选取适当的退火温度。
ZnO thin films were grown on p-Si (100) substrates by pulsed laser deposition and annealed at 500 ℃, 600 ℃ and 700 ℃ respectively. The effect of annealing on the crystal structure of ZnO thin films was also studied by X-ray diffraction The IV characteristics of ZnO and ZnO / p-Si heterojunction were measured. The results show that with the increase of annealing temperature, the intensity of the (002) diffraction peak of ZnO gradually increases, the full width at half maximum decreases, and the stress decreases and the grain size of ZnO becomes larger. It shows that the high temperature annealing contributes to the improvement of crystal quality of ZnO thin films. In the absence of illumination, the leakage current of the heterojunction increases with the increase of annealing temperature. When the sample is irradiated with 650 nm light, the sample annealed at 600 ° C shows the most obvious photoelectric effect, while the excessively high annealing temperature Destroy the interface structure of ZnO / p-Si heterojunction, make its photocurrent smaller. Therefore, to get a good performance of optoelectronic devices, should select the appropriate annealing temperature.