Epitaxy and Characteristics of Resonant Cavity LEDs at 650nm

• 作 者: 康玉柱 李建军 丁亮 杨臻 韩军 邓军 邹德恕 沈光地
• 机 构: Beijing Optoelectronic Technology Laboratory,Beijing University of Technology,
• 出 处: 半导体学报
• 发表日期: 2009年05期
• 关键词: divergence chosen FWHM encapsulation match Figure luminous resonant fabrication

Resonant-cavity light-emitting diodes(RCLED)at 650nm wavelength were grown by metal organic chemical vapor deposition.In order to improve the interface quality and reduce the device voltage,an AlGaInP material system has been chosen to grow the top DBRs.The emission properties of the RCLED were characterized by measuring PL and EL spectra.The average emission power of the device is 0.5mW at 20mA and 2.2V,and its spectrum full width at half maximum is about 10nm.

Resonant-cavity light-emitting diodes (RCLEDs) at 650 nm wavelength were grown by metal organic chemical vapor deposition. Order to improve the interface quality and reduce the device voltage, an AlGaInP material system has been chosen to grow the top DBRs. properties of the RCLED were characterized by measuring PL and EL spectra. The average emission power of the device is 0.5mW at 20mA and 2.2V, and its spectrum full width at half maximum is about 10nm.