论文部分内容阅读
为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性.利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度.得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致.在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法.
In order to characterize the material defects of the PbS thin film photoconductive infrared detector, the 1 / f and the generated-composite (gr) noise physical models were deduced in detail and the accuracy of the model was verified by experimental data.Using the relationship between 1 / f noise and surface defects, The surface trap density under different bias voltages was calculated, and the value increased with the increase of bias voltage, which indicated that the 1 / f noise was in direct proportion to the applied bias voltage and was in good agreement with the experimental results. Based on this model , The relationship between gr noises and the characteristic parameters of deep level defects has been studied and a method to characterize defect parameters such as defect activation energy, degeneracy factor and capture cross section by low frequency noise is proposed.