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设计并制作了一种栅控横向PNP双极晶体管测试结构,将其与相同工艺条件下制作的常规横向PNP双极晶体管封装在同一管壳内。在相同条件下对两种器件进行60Co-γ辐照效应和退火特性研究。结果发现,栅控和常规双极晶体管在基极电流、集电极电流、过剩基极电流和归一化电流增益方面,对电离辐射响应高度一致。对栅控横向PNP双极晶体管辐照感生电荷进行了定量分离,研究国产栅控横向PNP双极晶体管辐照感生缺陷的定量变化就可以客观、科学地反应国产常规横向PNP双极晶体管辐照感生电荷变化。
A gate-controlled lateral PNP bipolar transistor test structure is designed and fabricated, which is packaged in the same package with a conventional lateral PNP bipolar transistor fabricated under the same process conditions. The 60Co-γ irradiation effect and annealing characteristics of the two devices under the same conditions were studied. The results show that gated and conventional bipolar transistors are highly consistent with ionizing radiation response in terms of base current, collector current, excess base current, and normalized current gain. Quantitative separation of the induced charge induced by the gate-controlled lateral PNP bipolar transistor is studied. The quantitative change of induced induced defects in the homemade gate-controlled lateral PNP bipolar transistor can be objectively and scientifically reflected by the domestic conventional lateral PNP bipolar transistor According to changes in induced charge.