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采用座滴法考察了不同温度和气氛下Ni-56Si合金对SiC陶瓷的润湿和铺展行为。分析了固化后的液滴/SiC衬底界面和液滴表面的微结构和相组成。结果表明:该润湿体系于1350℃下在真空、1个大气压的静态或流动的Ar+5%(体积分数)H2的混合气3种气氛中均可获得优良的润湿性。在真空条件下,其铺展最快达到平衡,1350℃时的润湿性明显优于1100℃和1200℃,且在1100℃时的铺展过程与1350℃和1200℃有显著不同,即存在2种不同的铺展机制,这与SiC表面的润湿壁垒(SiO2层)的消除动力学有关。界面微结构分析进一步证实该系统的非反应润湿特性。
The droplet method was used to study the wetting and spreading behavior of Ni-56Si alloy on SiC ceramics under different temperatures and atmospheres. The microstructure and phase composition of the cured droplet / SiC substrate interface and droplet surface were analyzed. The results show that the wetting system can obtain good wettability at 1350 ℃ in three kinds of atmospheres of vacuum and 1 atmosphere of static or flowing Ar + 5% (volume fraction) H2. Under the vacuum condition, the spreading is the fastest, reaching the equilibrium. The wettability at 1350 ℃ is obviously better than 1100 ℃ and 1200 ℃, and the spreading process at 1100 ℃ is obviously different from 1350 ℃ and 1200 ℃, that is, there are two kinds Different spreading mechanisms are associated with the elimination kinetics of the wetting barrier (SiO2 layer) on the SiC surface. The interfacial microstructure analysis further confirms the non-reactive wetting characteristics of the system.