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由于半导体材料的特殊电性能,用半导体桥起爆炸药不仅具有较好的安全性能,而且所消耗的电能要比类似的金属桥低。通过改变快速放电的脉冲电容器放电装置(CDU)参数,研究了用电爆炸半导体桥起爆不同密度的重结晶泰安炸药的情况,装药壳体是外径为 6.2 mm 的紫铜,壁厚 0.3 mm。装药尺寸是Φ 5.6 mm×14 mm,密度ρ =(1.0～1.3)g/cm3,雷管的外观尺寸是Ф 6.2 mm×20 mm,结果表明:半导体桥对炸药的起爆很可能是一个快速燃烧转爆轰(DDT)的过程。用半导体桥起爆密度为ρ =1.0 g/cm3 泰安装药所需能量为 290 mJ,作用时间 t =3.27 μs,初始装药地到爆轰距离?r =6.31 mm。这种新型半导体桥雷管能可靠起爆密度为 1.64 g/cm3 的钝化(含 5%石蜡)泰安传爆药柱。
Due to the special electrical properties of semiconductor materials, the use of semiconductor bridges to detonate not only has good safety performance, but also consumes less energy than similar metal bridges. By changing the parameters of fast discharging discharge capacitor (CDU), the detonation rate of reclaimed Tai’an explosive with different densities was explored by using semiconducting bridge. The charge shell was made of copper with an outer diameter of 6.2 mm and the wall thickness was 0.3 mm. The charge size is Φ 5.6 mm × 14 mm, the density ρ = (1.0 ~ 1.3) g / cm3, and the detonator size is Ф 6.2 mm × 20 mm. The results show that the detonation of the semiconductor bridge is likely to be a rapid combustion Detonation detonation (DDT) process. The detonation density was ρ = 1.0 g / cm3 using a semiconductor bridge. The energy required for the Taian charge was 290 mJ, the action time t = 3.27 μs, and the initial charge to the detonation distance ø r = 6.31 mm. The new semiconductor bridge detonator can reliably detonate a deactivated (containing 5% paraffin) Taian booster cartridge with a density of 1.64 g / cm3.