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研究了高阻区熔和直拉单晶(扩铝)的P~+n管经电子辐照后产生的缺陷能级和它们的退火特性.区熔单晶中辐照生成的主要缺陷能级为 E:-0.43eV (双空位)和 E_v+ 0.49eV.在300℃退火后,这些能级的浓度与未退火前基本相同.直拉单晶中辐照生成的缺陷能级为E_c-0.18eV (氧空位对)和 E_v+ 0.49eV.在200℃以上退火后,氧空位明显减小并在300℃消失.
The defect levels and the annealing characteristics of P ~ + n tubes irradiated by electrons after high-resistance zone melting and Czochralski (CZT) single crystal were studied.The main defect level E: -0.43 eV (double vacancy) and E_v + 0.49 eV. The levels of these energies were essentially the same as those before annealing at 300 ° C. The defect level of irradiation in Czochralski was between E_c and 0.18 eV (Oxygen vacancy pair) and E_v + 0.49eV.After annealing above 200 ℃, oxygen vacancy significantly decreased and disappeared at 300 ℃.