论文部分内容阅读
用射频磁控溅射法在常温硅衬底上制备出了纳米碳化硅薄膜,并研究了退火温度对薄膜的影响。用傅里叶红外透射谱（FTIR）、x射线衍射（XRD）、x光电子能谱（XPS）及原子力显微镜（AFM）对薄膜样品进行了结构、组分和形貌分析。AFM表明,随着退火温度的升高,碳化硅颗粒尺寸增大;在高于1000℃退火3h后,碳化硅颗粒呈现出勺状拖尾。
The films of nanocrystalline silicon carbide were prepared by RF magnetron sputtering on silicon substrate at room temperature. The effects of annealing temperature on the films were also studied. The structure, composition and morphology of the films were characterized by FTIR, XRD, XPS and AFM. AFM showed that the size of SiC particles increased with the increase of annealing temperature. After annealing at 1000 ℃ for 3h, SiC particles showed a spoon-like tailing.