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自1974年Liechti等人提出GaAsMESFET超高速逻辑电路以来,国外相继提出了GaAsMESFET缓冲型场效应管逻辑(BFL)、肖特基势垒二极管场效应管逻辑(SDFL)、低夹断电压场效应管逻辑(LPFL)和直接耦合场效应管逻辑(DCFL)。这些逻辑电路以其各自的优点,目前都得到研究,性能也不断得到提高。据报导,最近法国Thomson-CSF中央研究所提出了一种新颖的GaAsFET逻辑电路结构,称之为“平面二维电子云FET”(planar two dimensional electron gas FET)。这种结构的特点是速度快、功耗低。在每一级功耗为900μW/门和62μW/门时,相应的传
Since Liechti et al. Proposed GaAsMESFET super-speed logic circuit in 1974, GaAsMESFET buffer-type FET logic (BFL), Schottky barrier diode field-effect logic (SDFL), low pinch- Logic (LPFL) and Directly Coupled Field Effect Logic (DCFL). These logic circuits, with their respective advantages, are currently under study and their performance is constantly being improved. It has been reported that a new GaAsFET logic circuit structure recently proposed by the Thomson-CSF Central Research Institute in France is called “planar two dimensional electron gas FET”. This structure is characterized by high speed, low power consumption. At each level of power consumption is 900μW / gate and 62μW / gate, the corresponding pass