Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

• 作 者: 李敬彦 曾湘波 李浩 谢小兵 杨萍 肖海波 张晓东 王启明
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Journal of Semiconductors
• 发表日期: 2013年10期
• 关键词: counterpart crystalline amorphous interfaces bonds spectrometer illumination Low

The effect of hydrogen plasma treatment(HPT) during the initial stage of microcrystalline silicon(μc-Si) growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8–1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si–H in the amorphous/crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density.

The effect of hydrogen plasma treatment (HPT) during the initial stage of microcrystalline silicon (μc-Si) growth on the defect density of μc-Si has been investigated. Lower absorption coefficient in the 0.8-1.0 eV indicated less defect density compared to its counterpart without HPT. The infrared spectroscopy of μc-Si with HPT shows an increase in 2040 cm-1, which reveals more Si-H in the amorphous / crystalline interfaces. We ascribe the decrease of defect density to hydrogen passivation of the dangling bonds. Improved performance of μc-Si solar cell with HPT is due to the reduced defect density.