Characteristics and realization of the second generation surface acoustic wave’s wavelet device

来源 :Journal of Systems Engineering and Electronics | 被引量 : 0次 | 上传用户:liutongyang123
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To overcome the bulk acoustic wave (BAW), the triple transit signals and the discontinuous frequency band in the first generation surface acoustic wave’s (FGSAW’s) wavelet device, the full transfer multistrip coupler (MSC) is applied to implement wavelet device, and a novel structure of the second generation surface acoustic wave’s (SGSAW’s) wavelet device is proposed. In the SGSAW’s wavelet device, the BAW is separated and eliminated in different acoustic propagating tracks, and the triple transit signal is suppressed. For arbitrary wavelet scale device, the center frequency is three times the radius of frequency band, which ensures that the frequency band of the SGSAW’s wavelet device is continuous, and avoids losing signals caused by the discontinuation of frequency band. Experimental result confirms that the BAW suppression, ripples in band, receiving loss and insertion loss of the SGSAW’s wavelet device are remarkably improved compared with those of the FGSAW’s wavelet device. To overcome the bulk acoustic wave (BAW), the triple transit signals and the discontinuous frequency band in the first generation surface acoustic wave’s (FGSAW’s) wavelet device, the full transfer multistrip coupler (MSC) is applied to implement a wavelet device, and a novel In the SGSAW’s wavelet device, the BAW is separated and eliminated in different acoustic propagation tracks, and the triple transit signal is suppressed. For arbitrary wavelet scale device, the center frequency is three times the radius of frequency band, which ensures that the frequency band of the SGSAW’s wavelet device is continuous, and avoids losing signals caused by the discontinuation of frequency band. Experimental result confirms that the BAW suppression, ripples in band, receiving loss and insertion loss of the SGSAW’s wavelet device are remarkably improved compared with those of the FGSAW’s wav elet device.
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