Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

• 作 者: 童金辉 赵璧君 王幸福 陈鑫 任志伟 李丹伟 卓祥景 章俊 易翰翔 李述体
• 机 构: Institute of Opto-electronic Materials and Technology, South China Normal University,
• 出 处: Chinese Physics B
• 发表日期: 2013年06期
• 关键词: barriers leakage electrostatic attributed overlap AlGaN lighting numerically ill

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.

GaN / InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN / InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.