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本文阐述了MOS高压和功率集成电路的现状。在前言部分叙述了这些集成结构的发展,回顾了与分立器件相比的一些主要优点,提出了一些关于集成方法的问题。对于用MOS技术制作并用作集成电路功率开关的各种器件结构进行了评述。考虑了最近开发的两大电路系列:(1)智能功率技术,它包括与控制电路和保护电路集成在一起的单个或多个纵向(共漏)功率开关;(2)高压集成电路,其功率器件是横向的,电流能力较低,其控制电路(CMOS或双极)具有较高的集成密度。提出了设计智能功率开关的一些主要功能问题。对于主要的晶体管单元结构,特别是限热电路和稳偏网络,作了详细介绍。可以看出,在电气波动和与工艺有关的参数变化方面及非稳定因素方面,所涉及的模拟电路都可做到非常稳定。
This article describes the status of MOS high voltage and power ICs. In the introductory section, the development of these integrated structures is recalled, some of the major advantages compared to discrete devices are reviewed, and some issues regarding integration methods are presented. Various device structures fabricated using MOS technology and used as integrated circuit power switches are reviewed. Consider two recently developed series of circuits: (1) intelligent power technology that includes single or multiple longitudinal (common-drain) power switches integrated with control and protection circuits; (2) high voltage integrated circuits whose power The device is lateral, with low current capability, and its control circuitry (CMOS or bipolar) has a higher integration density. Some major functional problems of designing intelligent power switch are put forward. For the main transistor cell structure, especially the heat-limiting circuit and the stability of the network, made a detailed introduction. It can be seen that the analog circuitry involved can be very stable in terms of electrical fluctuations and process-related parameter variations as well as instability.