Al-induced Lateral Crystallization of Amorphous Si Thin Films by Microwave Annealing

• 作 者: RAORui XUZhong-yang等
• 机 构: HuazhongUniversityofScienceandTechnology
• 出 处: 武汉理工大学学报：材料科学英文版
• 发表日期: 2002年4期
• 关键词: 微波退火法 非晶硅薄膜 半导体材料 晶体生长 相变 Al诱导 semiconductor thin film crystal growth phase tran
• 基金项目: the cooperation project between Huazhong University of Sci. & Tech. And Hongkong University of Sci. & Tech

Al-induced lateral crystallization of amorphous silicon thin films by microwave annealing is investigated. The crystallized Si films are examined by optical microscopy , Raman spectroscopy, transmission electron microscopy and transmission electron diffra