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基于经验电子理论(EET理论)及程氏改进的TFD理论,计算了CuCrSnZn合金时效处理后析出的析出相Cr与基体Cu形成的α-Cu(111)/Cr(110)相界面的价电子结构,利用界面结合因子ρ、△ρ分析了合金界面电子结构与合金的析出强化和软化温度的关系。结果表明,α-Cu(111)/Cr(110)晶面电子密度差较大,界面应力较大,有效阻碍了位错的运动和界面的推移,从而提高了合金的强度和软化温度。
Based on the empirical electron theory (EET theory) and Cheng’s improved TFD theory, the valence electron structure at the interface of α-Cu (111) / Cr (110) phase formed by the precipitation of precipitated phase Cr and matrix Cu after CuCrSnZn alloy aging treatment , The relationship between the interface electronic structure and the precipitation hardening and softening temperature of the alloy was analyzed by the interface combining factor ρ and △ ρ. The results show that the electron density difference of α-Cu (111) / Cr (110) plane is large and the interfacial stress is large, which effectively hinders the movement of dislocation and the interface transition, and increases the strength and softening temperature of the alloy.