论文部分内容阅读
集成电路的光刻除首次光刻不需要对准外,以后每次光刻都要求掩模图形与前一次光刻在硅片上的图形精确对准。对准时既要防止掩模与硅片之间的接触损伤和磨损掩模,又只允许亚微米级的对准误差。这就要
Lithography of integrated circuits requires no alignment for the first lithography, and every subsequent lithography requires precise alignment of the mask pattern with the previous lithography pattern on the wafer. It is necessary to prevent contact damage and wear masks between the mask and the wafer on alignment, and to allow only sub-micron alignment errors. This is necessary