论文部分内容阅读
采用分子束外延方法在GaSb和GaAs衬底上生长了不同周期厚度的InAs/GaSb高质量II型能带结构超晶格红外探测器,其探测波长覆盖2~5μm红外波段。采用高分辨透射电子显微镜、原子力显微镜、X射线衍射测试、室温与低温光电流响应谱及室温与低温光荧光谱等多种测试手段检验了分子束外延生长在不同衬底上的超晶格材料质量与光学质量。该材料用于制造2~5μmGaAs基与GaSb基InAs/GaSb超晶格红外探测器。在77K温度下,2μm波段GaAs基InAs/GaSb超晶格红外探测器探测率为4×109cm·Hz1/2/W,5μm波段GaSb基InAs/GaSb超晶格红外探测器探测率为1.6×1010cm·Hz1/2/W。
The InAs / GaSb high-quality II-band superlattice IR detector with different period thickness was grown on GaSb and GaAs substrates by molecular beam epitaxy with the detection wavelength covering 2 ~ 5 μm infrared band. High-resolution transmission electron microscopy, atomic force microscopy, X-ray diffraction tests, room temperature and low temperature photocurrent response spectra and room temperature and low temperature photoluminescence spectroscopy and other tests to test the molecular beam epitaxial growth on different substrates superlattice materials Quality and optical quality. The material used to make 2 ~ 5μmGaAs-based and GaSb-based InAs / GaSb superlattice infrared detector. The detection rate of GaAs-based InAs / GaSb superlattice infrared detector with 2μm band is 4 × 109cm · Hz1 / 2 / W at 77K, and the detection rate of GaAsb-based InAs / GaSb superlattice infrared detector with 5μm band is 1.6 × 1010cm · Hz1 / 2 / W.